BAV99-RTK/P

SEMICONDUCTOR BAV99 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E B L L ・Small Package : SOT-23. ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). D ・Low Forward Voltag : VF=0.9V(Typ.). 3 H G A 2 ・Small Total Capacitance : CT=0.9pF(Typ.). 1 Q P P SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current IF 250 mA IFSM 2 A J K CHARACTERISTIC N C MAXIMUM RATING (Ta=25℃) Maximum (Peak) Reverse Voltage Surge Current (10ms) DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 2 1 225* PD Power Dissipation mW 300** Junction Temperature Storage Temperature Range SOT-23 Tj 150 ℃ Tstg -55～150 ℃ * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm) Marking Lot No. H8 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=150mA - - 1.25 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2011. 8. 10 Revision No : 2 1/2 BAV99 2011. 8. 10 Revision No : 2 2/2