BAW56T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance BAW56T SILICON EPITAXIAL TYPE DIODE : ESM. : VF=0.92V (Typ.). : trr=1.6ns(Typ.). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=2.2pF (Typ.). MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 85 80 150 2 200 * 150 -55～150 UNIT V V mA A mW ℃ ℃ 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 3 C MAXIMUM RATING (Ta=25℃) J ESM Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm) Marking H1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 MAX. 1.25 0.5 4.0 4.0 μ A pF ns V UNIT 2009. 1. 23 Revision No : 1 1/2 BAW56T IF - VF FORWARD CURRENT IF (mA) 103 102 Ta =1 00 Ta C =2 5C IR - V R 101 REVERSE CURRENT IR (µA) 100 Ta=100 C Ta=75 C Ta=50 C 101 10 0 10-1 Ta =-2 5C 10-1 10 -2 10-2 Ta=25 C 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - V R TOTAL CAPACITANCE CT (pF) 2.5 2.0 1.5 1.0 0.5 0 trr - IF REVERSE RECOVERY TIME trr (ns) f=1MHz Ta=25 C 100 Ta=25 C Fig. 1 10 1 0.1 1 10 100 0.2 1 10 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT IF (mA) Fig. 1. REVERSE RECOVERY TIME(trr) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN=50Ω) IF =10mA 0 IR WAVEFORM 0.1 IR 50Ω 2kΩ -6V 50ns E trr PULSE GENERATOR (ROUT=50Ω) 2009. 1. 23 Revision No : 1 50Ω 2/2