BC327

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337. BC327 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB IE PC Tj Tstg RATING -50 -45 -5 -800 -200 800 625 150 -55 150 UNIT V V V mA mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification none:100 630, ) TEST CONDITION VCB=-45V, IE=0 VCE=-1V, IC=-100mA IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0 25:160 400, 40:250 630 MIN. 100 TYP. 100 16 MAX. -100 630 -0.7 -1.2 V V MHz pF UNIT nA SYMBOL ICBO hFE VCE(sat) VBE(ON) fT Cob 16:100 250, 2008. 4. 24 Revision No : 3 1/2 BC327 2008. 4. 24 Revision No : 3 2/2