BC517_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B BC517 EPITAXIAL PLANAR NPN TRANSISTOR C A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 30 10 500 625 150 -55 150 UNIT V V V mA L K D E G H F F 1 2 3 mW M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance ) TEST CONDITION IC=0.1mA, IE=0 IC=10mA, IB=0 IE=1.0mA, IC=0 VCB=40V, IE=0 VEB=10V, IC=0 IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=1mA IC=100mA, VCE=2V, f=100MHz VCB=10V, f=1MHz, IE=0 MIN. 40 30 10 30k TYP. 1.5 220 5.0 MAX. 1.0 1.0 1.0 2.0 V V MHz pF UNIT V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob 1999. 11. 30 Revision No : 1 1/2 BC517 h FE - I C COLLECTOR CURRENT I C (mA) 10 DC CURRENT GAIN h FE 6 I C - V CE(sat) 10 3 Ta=125 C 10 5 10 2 Ta=-55 C Ta =1 25 Ta= 25 10 4 10 1 10 3 10 -1 10 0 10 1 10 2 10 3 10 0 0 0.2 0.4 0.6 Ta=- 55 C Ta=25 C C C 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 625 500 400 300 200 100 0 0 25 50 75 100 125 150 175 COLLECTOR CURRENT I C (mA) 700 10 3 I C - VBE 10 2 10 1 10 0 0.8 1.0 1.2 1.4 1.6 1.8 AMBIENT TEMPERATURE Ta ( C) BASE-EMITTER VOLTAGE V BE (V) 1999. 11. 30 Revision No : 1 2/2