BC549_99

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURE For Complementary with PNP Type BC559/560. B BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC ) D SYMBOL BC549 VCBO RATING 30 UNIT V Collector-Base Voltage BC550 BC549 Collector-Emitter Voltage BC550 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range 50 30 V L 1 2 F H F VCEO VEBO IC PC Tj Tstg 3 5 100 625 150 -55 150 V mA mW M C 45 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance BC549 Noise Figure BC550 Note : hFE Classification A:110 220, B:200 450, NF BC549 BC550 BC549 BC550 SYMBOL V(BR)CEO TEST CONDITION IC=10mA, IB=0 MIN. 30 45 30 IC=10 A, IE=0 IE=10 A, IC=0 VCB=30V, IE=0 IC=2mA, VCE=5V IC=2mA, VCE=5V IC=100mA, IB=5mA IC=100mA, IB=5mA IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz IC=200 A, VCE=5V Rg=10k C:420 800 , f=1kHz 50 5.0 110 0.55 TYP. 0.9 300 MAX. V V 15 800 0.7 0.6 4.5 4.0 dB 10 V V V MHz pF V nA UNIT V(BR)CBO V(BR)EBO ICBO hFE(Note) VBE(ON) VCE(sat) VBE(sat) fT Cob 1999. 11. 30 Revision No : 2 1/1