BC559_99

SEMICONDUCTOR TECHNICAL DATA LOW NOISE APPLICATION. FEATURE For Complementary with NPN Type BC549/550. B BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR C A N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC ) D SYMBOL BC559 VCBO RATING -30 UNIT V Collector-Base Voltage BC560 BC559 Collector-Emitter Voltage BC560 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range -50 -30 V L 1 2 F H F VCEO VEBO IC PC Tj Tstg 3 -5 -100 625 150 -55 150 V mA mW M C -45 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification A:110 220, B:200 BC559 BC560 BC559 BC560 SYMBOL V(BR)CEO TEST CONDITION IC=-10mA, IB=0 MIN. -30 -45 -30 IC=-10 A, IE=0 IE=-10 A, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-200 A, VCE=-5V Rg=10k 450, C:420 800 , f=1kHz -50 -5.0 110 -0.55 TYP. -0.9 300 MAX. V V -15 800 -0.7 -0.6 7.0 4.0 V V V MHz pF dB V nA UNIT V(BR)CBO V(BR)EBO ICBO hFE VBE(ON) VCE(sat) VBE(sat) fT Cob NF 1999. 11. 30 Revision No : 2 1/1