BC637

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT TRANSISTORS. B BC637 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES A Complementary to BC638. N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 60 60 5 500 625 150 -55 150 UNIT V V V mA mW L D H F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Input Capacitance Collector Output Capacitance ICBO ) TEST CONDITION VCB=30V, IE=0 IC=10mA, IB=0 IC=100 A, IE=0 IE=10 A, IC=0 VCE=2V, IC=150mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=50mA, f=100MHz VEB=0.5V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz MIN. 60 60 5.0 40 TYP. 200 50 7.0 MAX. 100 160 0.5 1.0 V V MHz pF pF UNIT nA V V V SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO hFE VCE(sat) VBE fT Cib Cob * Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% 2000. 10. 2 Revision No : 0 1/1