BC807_09

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Complementary to BC817. 2 L E B BC807 EPITAXIAL PLANAR PNP TRANSISTOR L 3 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING -50 -45 -5 -800 800 350 150 -55～150 UNIT V C N P P V V mA mA mW ℃ ℃ M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 * : Package Mounted On 99.9% Alumina 10×8×0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob TEST CONDITION VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz MIN. 100 40 80 TYP. 9 MAX. -0.1 -0.1 630 -0.7 -1.2 V V MHz pF UNIT μ A μ A 16:100～250 , 25:160～400 , 40:250～630 Marking J D MARK SPEC TYPE. MARK BC807-16 5A BC807-25 5B BC807-40 5C Type Name Lot No. 2009. 2. 19 Revision No : 5 1/2 BC807 h FE - I C COLLECTOR CURRENT IC (mA) 1000 DC CURRENT GAIN h FE 500 300 Ta=100 C Ta=25 C COMMON EMITTER VCE =-1V I C - VCE -1000 -800 -600 -400 -200 0 COMMON EMITTER Ta=25 C -8 -7 -6 -5 -4 -3 -2 I B =-1mA 0 100 50 30 Ta=-25 C 10 -10 -30 -100 -300 -1000 0 -1 -2 -3 -4 -5 -6 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER I C /IB =25 I C - V BE -1000 COLLECTOR CURRENT I C (mA) -300 -100 C C Ta= 25 -3 -1 -0.3 COMMON EMITTER VCE =1V -0.1 Ta=25 C -10 -3 -1 -0.2 -0.03 -0.01 -10 Ta=-25 C -30 -100 -300 -1000 -0.4 Ta= Ta=100 C -30 -0.6 -0.8 Ta= -25 C 100 -1.0 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) fT - I C COMMON EMITTER Ta=25 C VCE =-5V P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 175 500 TRANSITION FREQUENCY f T (MHz) 300 100 30 10 -1 -3 -10 -30 -100 -300 -1000 COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C) 2009. 2. 19 Revision No : 5 2/2