BCX19_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE Super Mini Packaged Transistors for Hybrid Circuits. 2 L E B BCX19 EPITAXIAL PLANAR NPN TRANSISTOR L 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCEO VCEO VEBO IC IE PC Tj Tstg RATING 50 45 5 500 -500 200 150 -65 150 UNIT P P V C N V V mA mA mW M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking Lot No. Type Name U1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current ) TEST CONDITION IC=10mA, IB=0 IC=10 A, VBE=0 IE=10 A, IC=0 VCB=20V, IE=0 Ta=150 , VCB=20V, IE=0 VCE=1V, IC=100mA MIN. 45 50 5.0 100 70 40 TYP. 200 6.0 MAX. 100 5.0 600 1.2 0.62 V V MHz pF UNIT V V V nA A SYMBOL V(BR)CEO V(BR)CES V(BR)EBO ICBO DC Current Gain hFE VCE=1V, IC=300mA VCE=1V, IC=500mA Base-Emitter Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance VBE(ON) VCE(sat) fT Cob VCE=1V, IC=500mA IC=500mA, IB=50mA IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz 1999. 11. 30 Revision No : 2 J D 1/1