BD135

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES High Current. (Max. : 1.5A) C E BD135 EPITAXIAL PLANAR NPN TRANSISTOR A B D Low Voltage (Max. : 45V) DC Current Gain : hFE=40Min. @IC=0.15A Complementary to BD136. H J K F G L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 45 45 5 1.5 0.5 1.25 10 150 -55 150 UNIT V V V A A W N 1 2 3 M O P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.5 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ) TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5mA, VCE=2V IC=150mA, VCE=2V IC=500mA, VCE=2V IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=50mA MIN. 45 25 40 25 TYP. 190 MAX. 0.1 10 250 0.5 1.0 V V MHz UNIT A A V ICBO IEBO SYMBOL V(BR)CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency VCE(sat) VBE fT 2003. 6. 16 Revision No : 0 1/1