BD136

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES High Current. (Max. : -1.5A) C E BD136 EPITAXIAL PLANAR PNP TRANSISTOR A B D Low Voltage (Max. : -45V) DC Current Gain : hFE=40Min. @IC=-0.15A Complementary to BD135. H J K F G L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -45 -45 -5 -1.5 -0.5 1.25 10 150 -55 150 UNIT V V V A A W N 1 2 3 M O P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.5 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ) TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-30mA, IB=0 IC=-5mA, VCE=-2V IC=-150mA, VCE=-2V IC=-500mA, VCE=-2V IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-5V, IC=-50mA MIN. -45 25 40 25 TYP. 160 MAX. -0.1 -10 250 -0.5 -1.0 V V MHz UNIT A A V ICBO IEBO SYMBOL V(BR)CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency VCE(sat) VBE fT 2003. 6. 16 Revision No : 0 1/1