BD139

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ・High Current. (Max. : 1.5A) ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. C E BD139 EPITAXIAL PLANAR NPN TRANSISTOR A B D F G H J K L MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25℃ Tc=25℃ SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 80 5 1.5 0.5 1.25 W 10 150 -55～150 ℃ ℃ UNIT V V V A A N 1 2 3 O P M 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.5 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Voltage VCE(sat) VBE TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5mA, VCE=2V IC=150mA, VCE=2V IC=500mA, VCE=2V IC=500mA, IB=50mA VCE=2V, IC=50mA MIN. 80 25 40 25 TYP. MAX. 0.1 10 250 0.5 1.0 V V UNIT μ A μ A V 2008. 10. 10 Revision No : 1 1/2 BD139 h FE - I C 100 90 DC CURRENT GAIN h FE 80 70 60 50 40 30 20 10 0 10 100 1000 SATURATION VOLTAGE VCE(sat) (mV) VCE=2V VCE(sat) - IC 500 450 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 10 IC/IB=20 IC/IB=10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A) VCE(sat) - IC BASE-EMITTER VOLTAGE VCE(sat) (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1 10 COLLECOTR CURRENT IC (A) VBE(sat) IC/IB=10 VBE(ON) VCE=5V SAFE OPERATING AREA 10 IC MAX. (Pulsed) IC MAX. (Continuous) 1 1ms DC 100µs 0.1 0.01 1 10 100 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE VCE (V) PC - TC COLLECTOR POWER DISSIPATION PC (W) 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 CASE TEMPERATURE Tc ( C) 2008. 10. 10 Revision No : 1 2/2