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BF421_02

BF421_02

  • 厂商:

    KEC

  • 封装:

  • 描述:

    BF421_02 - SILICON PNP TRIPLE DIFFUSED TYPE - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
BF421_02 数据手册
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B BF421 SILICON PNP TRIPLE DIFFUSED TYPE C FEATURES Complementary to BF420. N K D G E A High Voltage : VCEO>-300V MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Peak Collector Power Dissipation Base Current Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP PC IB Tj Tstg RATING -300 -300 -5 -50 mA -100 625 -50 150 -65 150 mW mA UNIT V V M H F F V L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Reverse Transfer Capacitance ) TEST CONDITION VCB=-200V, IE=0 ICBO IEBO hFE VCE(sat) VBE fT Cre VCB=-200V, IE=0, Tj=150 VEB=-5V, IC=0 VCE=-20V, IC=-25mA IC=-30mA, IB=-5mA VCE=-20V, IC=-25mA VCE=-10V, IC=-10mA VCB=-30V, IE=0, f=1MHz MIN. 50 60 TYP. -0.75 MAX. -10 -10 -50 -0.6 1.6 UNIT nA A nA V V MHz pF SYMBOL 2002. 6. 25 Revision No : 3 1/3 BF421 I C - VCE (LOW VOLTAGE REGION) COLLECTOR CURRENT I C (mA) -60 -50 -40 -30 -20 -10 0 3.0 1.6 1.0 0.6 0.4 COMMON EMITTER Ta=25 C 0.3 0.2 0.15 0.1 I B =0.05mA 0 h FE - I C 500 300 DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C VCE =-20V 100 50 30 -10 -5 10 5 -0.3 -1 -3 -10 -30 -100 0 -4 -8 -12 -16 -20 -24 -28 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) h FE - I C 300 Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER V CE =-10V V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -5 -3 COMMON EMITTER Ta=25 C 500 DC CURRENT GAIN h FE 100 50 30 -1 -0.5 -0.3 I C/I B =10 10 5 -0.3 -1 -3 -10 -30 -100 -0.1 -0.05 -0.3 -1 5 2 -3 -10 -30 (mA) -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -5 -3 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /IB =5 I C - V BE -50 -40 -30 Ta=25 C 00 C Ta=1 COMMON EMITTER VCE =10V -1 -0.5 -0.3 0C Ta=10 -20 -10 0 -0.1 -0.05 -0.3 -1 -3 -10 -25 25 -30 -100 0 -0.2 -0.4 -0.6 Ta=-25 C -0.8 -1.0 -1.2 COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) 2002. 6. 25 Revision No : 3 2/3 BF421 COLLECTOR OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) C ob .C re - V CB I E =0 f=1MHz Ta=25 C f T - IC TRANSITION FREQUENCY f T (MHz) 500 300 COMMON EMITTER Ta=25 C VCE =-20V VCE =-10V 10 8 6 4 2 0 C ob C re 100 50 30 0 -40 -80 -120 -160 -200 -240 -280 10 -0.3 -1 -3 -10 -30 COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA) P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 1000 COLLECTOR CURRENT I C (mA) 800 600 400 200 0 -200 -100 -50 -30 SAFE OPERATING AREA I C MAX.(PULSED) * I C MAX.(CONTINUOUS) DC OP 1 10 0ms 0m s* * s 1m * ER -10 -5 -3 * AT IO N SINGLE NONREPETITIVE PULSE Ta=25 C 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) -1 -0.5 -3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) 2002. 6. 25 Revision No : 3 3/3
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