BFS20_99

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. BFS20/BF599 EPITAXIAL PLANAR NPN TRANSISTOR L E B L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage BFS20 Emitter-Base Voltage BF599 Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) G SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 40 25 4 UNIT V V 2 3 1 P P V 5 25 -25 200 150 -65 150 mA mA 1. EMITTER DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A C N H M mW 2. BASE 3. COLLECTOR K SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage BFS20 BF599 BFS20 Collector Cut-off Current BF599 DC Current Gain BFS20 Base-Emitter Voltage BF599 BFS20 Transition Frequency BF599 Collector Output Capacitance ) TEST CONDITION IC=10 A, IE=0 IC=2mA, IB=0 IE=10 A, IC=0 VCB=20V, IE=0 MIN. 40 25 4 5 40 275 750 750 550 550 0.35 100 10 100 900 mV MHz pF nA A nA V TYP. MAX. UNIT V V SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCB=20V, IE=0, Ta=150 VCB=40V, IE=0 hFE VBE(ON) VCE=10V, IC=7mA VCE=10V, IC=7mA fT Cob VCE=10V, IC=7mA, f=100MHz VCB=10V, f=1MHz, IE=0 MARK SPEC TYPE BFS20 BF599 MARK G1 G2 Marking Type Name Lot No. Lot No. G1 Type Name G2 1999. 11. 30 Revision No : 2 J D 1/1