E30A23VPS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A23VPS, E30A23VPR STACK SILICON DIFFUSED DIODE F2 D FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.) F1 E POLARITY E30A23VPS (+ Type) E30A23VPR G (- Type) A MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Reverse Surge Current Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 30 300(50Hz) 30 17 17 -40 200 -40 200 UNIT A A A V V DIM MILLIMETERS DIM MILLIMETERS 0.32 F1 Φ11.7+0.1/-0 A 3.1 F2 3.85+0/-0.2 B _ G 0.5 D Φ1.45 + 0.1 L1 8.4 MAX E 1.55 DIM TYPE POLARITY S L2 R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Zener Voltage Repetitive Peak Reverse Current Transient Thermal Resistance Reverse Leakage Current Under High Temperature Temperature Resistance ) TEST CONDITION IFM=100A IZ=10mA VR=VRM IFM=100A Ta=150 , VR=VRM DC total junction to case MIN. 21 TYP. 23 MAX. 1.17 25 10 140 2.5 1.0 UNIT V V A mV mA /W SYMBOL VFM VZ IRRM VF HIR Rth 2002. 10. 9 Revision No : 1 B PF L1 L2 1/1