E30A2CR

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=30A. E30A2CS, E30A2CR STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 D1 D2 B1 E F POLARITY E30A2CS (+ Type) E30A2CR (- Type) T C2 H MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRRM IF(AV) IFSM Tj Tstg RATING 200 30 350 (50Hz) -40 150 -40 150 UNIT V A A DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS _ 10.0 + 0.3 _ 13.5 + 0.3 _ 24.0 + 0.5 _ 8.5 + 0.3 _ 10.0 + 0.3 _ 2.0 + 0.3 _ 5.0 + 0.3 _ 2.5 + 0.3 DIM D2 D3 E F G H T MILLIMETERS _ 5.0 + 0.3 _ 4.5 + 0.3 _ 1.9 + 0.3 _ 9.0 + 0.3 _ 1.0 + 0.3 _ 4.4 + 0.5 _ 0.6 + 0.3 MR ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Temperature Resistance ) TEST CONDITION IFM=100A VRRM=200V IF=0.1A, IR=0.1A DC total junction to case MIN. TYP. MAX. 1.2 50 15 1.0 UNIT V A S /W SYMBOL VFM IRRM trr Rth 2002. 10. 9 Revision No : 2 C1 G B2 Repetitive Peak Reverse Voltage : VRRM=200V. 1/2 E30A2CS, E30A2CR AVERAGE FORWARD CURRENT I F(AV) (A) I F - VF 1000 FORWARD CURRENT I F (A) I F(AV) - Ta 40 Ta=Tc 30 100 20 10 10 1 0.7 0.8 0.9 1 1.1 1.2 0 0 40 80 120 160 FORWARD VOLTAGE V F (V) AMBIENT TEMPERATURE Ta ( C) 2002. 10. 9 Revision No : 2 2/2