GN1G

SEMICONDUCTOR TECHNICAL DATA FEATURES Plastic package has Underwriters Laboratory flammability Classification 94V-0. For surface mounted aplications. Low profile package. Built-in strain relief, ideal for automated placement. Glass passivated chip junction. High temperature soldering guaranteed : 250 /10 seconds at terminals. 1 C 2 B GN1G Surface Mount Glass Passivated Rectifier E A MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive peak reverse voltage RMS voltage DC blocking voltage Average forward rectified current (see fig.1) ) SYMBOL VRRM VRMS VDC IF(AV) RATING 400 280 400 1 UNIT V V V A G DIM A B C D E F G Unit : mm MILLIMETERS _ 4.3 + 0.3 _ 2.525 + 0.12 _ 1.45 + 0.18 _ 5.0 + 0.2 _ 1.15 + 0.35 _ 2.075 + 0.175 _ 0.23 + 0.08 F 1. ANODE 2. CATHODE SMA(1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=110 Operating Junction and Storage Temperature Range Tj, Tstg -55~150 IFSM 40 A Marking Cathode Mark Type Name E140 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward voltage Leakage current Reverse recovery time Junction capacitance Thermal resistance Ta=25 Ta=125 ) CONDITION IF=1A VRRM=400V IF=0.5A, IR=1.0A VR=4.0V, f=1MHz Junction to ambient Junction to lead MIN TYP 1.8 12 MAX 1.1 1.0 50 75 27 UNIT V A S pF SYMBOL VF IR trr CJ Rth(A) (Note1) Rth(L) E D /W Note 1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with (5.0 5.0mm) copper pads. 2006. 5. 16 Revision No : 1 1/2 GN1G Fig.1 Forward Current Derating Curve Peak Forward Surge Current (A) 1.2 100 Fig.2 Maximum Non-Repetitive Peak Forward Surge Current TL=110 C 8.3mS Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 1.0 0.8 0.6 0.4 0.2 0 Resistive or Inductive Load 10 0.2x0.2 (5.0x5.0mm) Thick Copper Pad Areas 0 1 10 100 0 20 40 60 80 100 120 140 160 Lead Temperature ( C) Number of Cycles at 60Hz Instantaneous Reverse Leakage Current (µA) Fig.3 Typical Instantaneous Forward Characteristics Instantaneous Forward Current (A) 80 5C Tj=2 Fig.4 Typical Reverse Leakage Characteristics 10 Tj=125 C Tj=75 C 10 1 1 0.1 Tj=25 C 0.1 Pulse Width=300 1% Duty Cycle 0.01 0.01 0.4 0.001 0 20 40 60 80 100 0.8 1.2 1.6 2.0 Instantaneous Forward Voltage (V) Percent of rated Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance Tj=25 C f=1.0MHz Vsig=50mVp-p Fig.6 Transient Thermal Impedance transient thermal Impedance ( C/W) 1000 100 Junction Capacitance (pF) 100 10 10 Units Mounted on 0.20x0.20"(5.0x5.0mm) x0.5 mil. Inches(0.013mm) Thick Copper Land Areas 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) t, Pulse Duration (sec.) 2006. 5. 16 Revision No : 1 2/2