K3520PQ-XH

SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 S2 FEATURES ・Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20mΩ MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _ 180 +10 m MAXIMUM RATING (Ta=25℃ Unless otherwise noted) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage Temperature Range SYMBOL VDSS VGSS Tstg RATING 24 ±12 -55～150 UNIT V V ℃ Equivalent Circuit D D G1 Rg G2 Rg S1 S2 2010. 4. 29 Revision No : 0 1/3 K3520PQ-XH Electrical Characteristics (Ta=25℃ Unless otherwise noted) CHARACTERISTIC Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage SYMBOL V(BR)DSS V(BR)GSS IDSS IGSS Vth TEST CONDITION ID = 250μ VGS = 0V A, IG = ±100㎂, VDS = 0V VDS = 24V, VGS = 0V VGS = ±12V, VDS = 0V VDS=VGS, ID=250 A VGS = 4.5V, ID = 1.0A Drain to Source On Resistance RDS(on) VGS = 3.9V, ID = 1.0A VGS = 3.5V, ID = 1.0A Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Source-Drain Forward Voltage Rg Ciss Coss Crss Qg Qgs Qgd VSD VGS = 0V, IS = 1.0A VDD=10V, VGS=3.9V, IS=4.0A VDS = 10V, VGS = 0V, f=1MHz f=1MHz MIN 24 ±12 0.5 0.50 TYP ±14 1.1 12.5 13.5 15.0 3.0 600 115 83 6.0 0.8 2.5 0.70 MAX 1.0 ±10 1.5 16.0 17.0 20.0 0.86 V nC pF UNIT V V ㎂ ㎂ V mΩ mΩ mΩ kΩ 2010. 4. 29 Revision No : 0 2/3 K3520PQ-XH DIE INFORMATION 2000 S2 G2 1080 S1 G1 BOTTOM : COMMON DRAIN CONTENTS Wafer size Wafer thickness Front Metal Back Metal Passivation Layer Die Size (with scribe lane) Scribe lane width Gate Pad Size Die edge to gate Pad Die edge to Source Pad Gross Die(per Wafer) 8 inch notch type 180um Aℓ-4um Ti/Ni/Ag-1.4um Yes 2000×1080㎛2 60㎛ 170×163㎛2 93㎛ 70㎛ 13,470ea VALUE 2010. 4. 29 Revision No : 0 3/3