KDR331E

SEMICONDUCTOR TECHNICAL DATA HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : ESM. 2 KDR331E SCHOTTKY BARRIER TYPE DIODE E B D 3 DIM A B C D E G H MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg Topr RATING 15 10 100 * 50 * 1* 100 125 -55 -40 125 100 UNIT V V mA mA A mW 1. ANODE 1 2. ANODE 2 3. CATHODE J H J C 3 2 1 ESM * : Unit Rating. Total Rating=Unit Rating 1.5 Marking Type Name UW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.21 0.25 0.35 13 MAX. 0.30 0.50 20 40 A pF V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT 2000. 11. 3 Revision No : 0 1/2 KDR331E I F - VF 1 FORWARD CURRENT I F (mA) Ta=23 C I R - VR 10 REVERSE CURRENT I R (A) Ta=23 C 1 0.1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE V F (mV) 0.01 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) C T - VR 14 TOTAL CAPACITANCE C T (pF) 12 10 8 6 4 2 0 0.01 0.1 1 10 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION P (mW) 120 100 80 60 40 20 0 0 25 50 P - Ta 75 100 125 AMBIENT TEMPERATURE Ta ( C) 2000. 11. 3 Revision No : 0 2/2