KDR331V

SEMICONDUCTOR TECHNICAL DATA HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Very Small Package : VSM. 2 KDR331V SCHOTTKY BARRIER TYPE DIODE E B 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg Topr RATING 15 10 100 * 50 * 1* 100 125 -55 -40 125 100 UNIT P P V V mA mA A mW 1. ANODE 1 2. ANODE 2 3. CATHODE C DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ 0.8 + 0.05 G 0.40 H _ 0.12 + 0.05 J _ K 0.2 + 0.05 P 5 A G H K J D 3 2 1 VSM * : Unit Rating. Total Rating=Unit Rating 1.5 Marking Type Name UW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.21 0.25 0.35 13 MAX. 0.30 0.50 20 40 A pF V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT 2001. 7. 25 Revision No : 0 1/2 KDR331V I F - VF 1 FORWARD CURRENT I F (mA) Ta=23 C I R - VR 10 REVERSE CURRENT I R (A) Ta=23 C 1 0.1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE V F (mV) 0.01 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V) C T - VR 14 TOTAL CAPACITANCE C T (pF) 12 10 8 6 4 2 0 0.01 0.1 1 10 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION P (mW) 120 100 80 60 40 20 0 0 25 50 P - Ta 75 100 125 AMBIENT TEMPERATURE Ta ( C) 2001. 7. 25 Revision No : 0 2/2