KDR357_09

SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK B 1 KDR357 SCHOTTKY BARRIER TYPE DIODE G FEATURES ・Low Forward Voltage : VF(3)=0.43V(Typ.) ・Low Reverse Current : IR=5㎂(Max.) ・Small Package : USC. K A H E 2 D J C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4×4mm. SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 45 40 200 100 1 200* 125 -55～125 UNIT V V mA mA A mW ℃ ℃ M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC * : Mounted on a glass epoxy circuit board of 20×20mm, Marking UL Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT IF=1mA IF=10mA IF=100mA VR=40V VR=0V, f=1MHz TEST CONDITION MIN. TYP. 0.24 0.31 0.43 30 MAX. 0.55 5 μ A pF V UNIT 2009. 9. 7 Revision No : 5 F Lot No. L 1/2 KDR357 IF - V F FORWARD CURRENT IF (mA) 100 1,000.0 IR - V R REVERSE CURRENT IR (uA) Ta=125 C Ta=75 C Ta=125 C 100.0 Ta=75 C 10 Ta=25 C 10.0 1.0 Ta=25 C 1 0 0.1 0.2 0.3 0.4 0.5 0.1 0 5 10 15 20 25 30 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - V R TERMINAL CAPACITANCE CT (pF) 30 25 20 15 10 5 0 f=1MHz Ta=25 C 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2009. 9. 7 Revision No : 5 2/2