KDR368E

SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Small Package : ESC. CATHODE MARK KDR368E SCHOTTKY BARRIER TYPE DIODE Low Forward Voltage : VF(2)=0.23V (Typ.) C 1 E MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 100 1 150* 125 -55 125 UNIT V V mA mA A mW 2 D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC * : Mounted on a glass epoxy circuit board of 20 20mm, Marking Type Name U4 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT ) TEST CONDITION IF=1mA IF=5mA IF=100mA VR=10V VR=10V, f=1MHz MIN. TYP. 0.18 0.23 0.35 20 MAX. 0.30 0.50 20 40 A pF V UNIT SYMBOL 2003. 2. 25 Revision No : 1 1/2 KDR368E I F - VF 100m FORWARD CURRENT I F (A) REVERSE CURRENT I R (A) 10 -2 I R - VR Ta=125 C 10m Ta =1 Ta 00 =7 C Ta = 5C Ta 50 =2 C 5 C Ta =0 Ta C =-2 5C 10 -3 Ta=75 C 1m 10 -4 Ta=25 C 100µ 10 -5 10µ 0 0.1 0.2 0.3 0.4 0.5 10 -6 0 5 10 15 20 25 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR 40 CAPACITANCE C T (pF) 240 POWER DISSIPATION P (mW) f=1MHz Ta=25 C P - Ta Mounted on a glass epoxy circuit board of 20 20mm, pad dimension 4 4mm. 200 160 120 80 40 0 50 30 20 10 0 10m 30m 0.1 0.3 1 3 10 20 25 50 75 100 125 150 REVERSE VOLTAGE V R (R) AMBIENT TEMPERATURE Ta ( C) 2003. 2. 25 Revision No : 1 2/2