KDR393_08

SEMICONDUCTOR TECHNICAL DATA Low Voltage High Speed Switching. KDR393 SCHOTTKY BARRIER TYPE DIODE FEATURES ・Low Forward Voltage : VF =0.60V(Max.) A E M B M ・Low Reverse Current : IR=5μ A(Max.) 2 D 3 DIM A B C D E G H J K 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN J G C L MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current (10mA) Junction Temperature Storage Temperature SYMBOL VRRM VR IO IFSM Tj Tstg RATING 40 40 0.1 1 125 -55～125 UNIT V V A A ℃ ℃ H N K N L M N 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 USM Marking Lot No. Type Name R9 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF IR CT TEST CONDITION IF=10mA IF=100mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.36 0.51 20 MAX. V 0.60 5 25 μ A pF UNIT 2008. 9. 8 Revision No : 3 1/2 KDR393 CT - VR TERMINAL CAPACITANCE CT (pF) 25 20 15 10 5 0 10 3 IR - VR REVERSE CURRENT IR (nA) 10 2 0 10 20 30 40 10 0 10 20 30 40 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) IF - VF FORWARD CURRENT IF (nA) 8 10 10 10 10 10 10 10 7 6 5 4 3 2 0 200 400 600 800 FORWARD VOLTAGE VF (mV) 2008. 9. 8 Revision No : 3 2/2