KDR552F

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR552F SCHOTTKY BARRIER TYPE DIODE FEATURES Low reverse current, Low capacitance. Small Package : TFSC. CATHODE MARK D C B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current ) SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 25 50 200 125 -55 125 UNIT V F E DIM A B C D E F MILLIMETERS _ 1.00 + 0.05 0.80+0.10/-0.05 _ 0.60 + 0.05 _ 0.30 + 0.05 0.40 MAX _ 0.13 + 0.05 V mA mA 1. ANODE 2. CATHODE Non-repetitive Peak Surge Current (10mS) Junction Temperature Storage Temperature Range TFSC Marking Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF IR CT IF=1mA IF=5mA VR=20V VR=1V, f=1MHz TEST CONDITION MIN. TYP. MAX. 0.33 V 0.38 0.45 2.80 A pF UNIT 2005. 5. 27 Revision No : 0 7 1/2 KDR552F IF - V F 10 1 10 0 IR - V R 10-4 Pulse test 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 0 0.2 0.4 0.6 0.8 10 Ta = 25 C Ta = 75 C Reverse Current IR (A) Forward Current IF (A) 10-5 Ta = 75 C 10-6 Ta = 25 C 10-7 10-8 0 10 20 30 40 Forward Voltage VF (V) Reverse Current VR (V) CT - V R f=1MHz Total Capacttance CT (pF) 10 1.0 0.1 0.1 1.0 10 Reverse Current VR (V) 2005. 5. 27 Revision No : 0 2/2