KDR582E

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR582E SCHOTTKY BARRIER TYPE DIODE FEATURES Low reverse current, low capacitance. Small package : ESC. CATHODE MARK C 1 E 2 D F MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VR VR IF PD* Tj Tstg RATING 4 4 130 150 150 -55 150 UNIT V V mA mW 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 B * Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4 Marking Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION IF=0.1mA Forward Voltage VF IF=1mA IF=10mA Reverse Current Total Capacitance Series Resistance IR CT rS VR=3V VR=3V, TA=60 VR=0V, f=1MHz IF=5mA, f=10kHz MIN. 0.2 0.25 0.35 0.4 TYP. MAX. 0.35 0.45 0.6 0.25 1.25 0.75 15 A pF V UNIT 2006. 11. 23 Revision No : 0 A ESC S4 1/2 KDR582E CT - VR 1.0 103 f=1MHz IR - VR Total Capacitance CT (pF) 0.8 0.6 0.4 0.2 0.0 Reverse Current IR (µA) 102 101 0 2 4 6 8 10 100 Ta=25 C 0 2 4 6 8 10 Reverse Voltage VR (V) Reverse Current VR (V) V F - IF 100 f=1MHz Forward Current IF (mA) 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage VF (V) 2006. 11. 23 Revision No : 0 2/2