KDR582S

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR582S SCHOTTKY BARRIER TYPE DIODE FEATURES ・Low reverse current, low capacitance. L E B L 2 A G H 1 3 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR VR IF Tj Tstg RATING 4 4 130 150 -55～150 UNIT P P V C N V mA ℃ ℃ M K DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 Marking Lot No. Type Name MC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION IF=0.1mA Forward Voltage VF IF=1mA IF=10mA Reverse Current Total Capacitance Series Resistance IR CT rS VR=3V VR=3V, TA=60℃ VR=0V, f=1MHz IF=5mA, f=10kHz MIN. 0.2 0.25 0.35 0.4 TYP. MAX. 0.35 0.45 0.6 0.25 1.25 0.75 15 μ A pF V UNIT J D Ω 2009. 12. 9 Revision No : 0 1/2 KDR582S CT - VR 1.0 103 f=1MHz IR - VR Total Capacitance CT (pF) 0.8 0.6 0.4 0.2 0.0 Reverse Current IR (µA) 102 101 0 2 4 6 8 10 100 Ta=25 C 0 2 4 6 8 10 Reverse Voltage VR (V) Reverse Current VR (V) V F - IF 100 f=1MHz Forward Current IF (mA) 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage VF (V) 2009. 12. 9 Revision No : 0 2/2