KDR720S

SEMICONDUCTOR TECHNICAL DATA For high speed switching circuit. For small current rectification. FEATURES Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible. 2 L KDR720S SCHOTTKY BARRIER TYPE DIODE E B L 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature ) P P SYMBOL VRRM VR IO IFSM Tj Tstg RATING 30 30 0.2 1 125 -55 125 UNIT V V A A C N M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H K J D 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 SOT-23 Marking Lot No. Type Name MG ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR CT trr ) TEST CONDITION IF=0.2A VR=30V VR=0V, f=1MHz IR=IF=10mA MIN. TYP. 30 3 MAX. 0.55 50 UNIT V A pF nS SYMBOL 2003. 2. 25 Revision No : 1 1/2 KDR720S IF 10 FORWARD CURRENT I F (mA) 3 - VF 10 REVERSE CURRENT I R (µA) 5 IR - VR 10 2 10 1 10 10 -1 Ta =1 50 C 10 0 C C Ta =2 5 10 4 10 3 10 10 2 Ta=150 C = Ta Ta=100 C Ta =25 C Ta=25 C 1 10 -1 -2 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE V R (V) V F - Ta 0.5 FORWARD VOLTAGE VF (V) 0.4 0.3 0.2 0.1 0 I F =1mA I F =200mA I F =100mA IR 10 4 REVERSE CURRENT I R (µA) Ta 10 3 VR =30V 10 2 VR =10V VR =5V 10 -40 0 40 80 120 160 200 1 -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) AMBIENT TEMPERAURE Ta ( C) C T - VR 32 TOTAL CAPACITANCE CT (pF) 28 24 20 16 12 8 4 0 0 5 10 15 20 25 30 Ta=25 C f=1MHz REVERSE VOLTAGE VR (V) 2003. 2. 25 Revision No : 1 2/2