KDR735T

SEMICONDUCTOR TECHNICAL DATA LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. KDR735T SCHOTTKY BARRIER TYPE DIODE E B FEATURES Low Reverse Current : IR=0.1 A(Typ.) A F 1 4 DIM MILLIMETERS _ A 2.9 + 0.2 B C D E F G H I J K 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 _ 0.16 + 0.05 0.00-0.10 0.25+0.3/-0.15 _ 0.60 + 0.1 _ 0.55 + 0.1 High Reliability. Small Package : TSQ. 2 3 D MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VR IO* IFSM* PD** Tj Tstg 1.5) RATING 30 200 1 900 125 -40 125 UNIT V mA A mW K C H I I G 4 1. D1 ANODE 2. D2 ANODE 3. D2 CATHODE 4. D1 CATHODE D1 1 3 D2 2 TSQ * Unit rating. (Total rating = Unit rating pad dimension of 4 4mm. ** Mounted on a glass epoxy circuit board of 20 20mm, Marking 4 3 Lot No. Type Name R3 1 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current VF IR ) TEST CONDITION IF=200mA VR=10V MIN. TYP. MAX. 0.60 1.0 UNIT V A SYMBOL 2006. 2. 15 Revision No : 0 1/2 KDR735T I F - VF 1 FORWARD CURRENT I F (A) 100m 10m Ta =1 25 Ta C =7 5 Ta C =2 5 C I R - VR 1m REVERSE CURRENT I R (A) 100µ 10µ 1µ Ta=25 C Ta=125 C Ta=75 C 1m 100µ 10µ 1µ 0 Ta =-2 5 C 100n Ta=-25 C 10n 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 30 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR 100 TOTAL CAPACITANCE CT (pF) POWER DISSIPATION P (mW) f=1MHz Ta=25 C P - Ta 240 200 160 120 80 40 0 Mounted on a glass epoxy circuit board of 20 20mm, pad dimension 4 4mm. 10 1 0 10 20 30 REVERSE VOLTAGE VR (V) -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2006. 2. 15 Revision No : 0 2/2