KDS115_08

SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ・Small Package. ・Small Total Capacitance : CT=1.2pF(Max.). A M KDS115 SILICON EPITAXIAL PLANAR DIODE E B M D 3 ・Low Series Resistance : rS=0.6Ω(Typ.). DIM A B C D E G H 2 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN J G MAXIMUM RATING (Ta=25℃) L J K CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 50 125 -55～125 UNIT V mA ℃ ℃ C H N K N L M N 3 1. CATHODE 1 2. ANODE 2 3. ANODE1/ CATHODE 2 2 1 USM Marking Lot No. Type Name R3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage Reverse Current Reverse Voltage Total Capacitance Series Resistance SYMBOL VF IR VR CT rs IF=2mA VR=15V IR=1μ A VR=6V, f=1MHz IF=2mA, f=100MHz TEST CONDITION MIN. 30 TYP. 0.8 0.6 MAX. 0.85 0.1 1.2 0.9 UNIT V μ A V pF Ω 2008. 9. 8 Revision No : 2 1/2 KDS115 rs - I F 3 SERIES RESISTANCE r s (Ω) TOTAL CAPACITANCE CT (pF) Ta=25 C f=100MHz CT - VR 3 Ta=25 C f=1MHz 1 1 0.5 0.3 1 3 5 10 20 FORWARD CURRENT I F (mA) 0.5 0.3 1 3 5 10 20 REVERSE VOLTAGE VR (V) I F - VF 10 FORWARD CURRENT I F (A) -1 Ta=25 C 10 -2 10 -3 10 -4 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE V F (V) 2008. 9. 8 Revision No : 2 2/2