KDS120

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance KDS120 SILICON EPITAXIAL TYPE DIODE E : USM. : VF=0.92V (Typ.). A M B M D 3 DIM A B C D E G H J K : trr=1.6ns(Typ.). : CT=2.2pF (Typ.). 2 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN J G C L MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55～150 UNIT V V mA mA A mW ℃ ℃ H N K N L M N 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 USM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking Lot No. Type Name A3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 0.92 2.2 1.6 MAX. 1.20 0.5 4.0 4.0 μ A pF nS V UNIT 2008.9. 8 Revision No : 4 1/2 KDS120 I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C 10 0 Ta = 3 IR - VR 10 REVERSE CURRENT I R (µA) Ta=100 C 2 1 Ta=75 C Ta=50 C Ta 1 10 10 -1 Ta =-2 5 =2 5 10 C C -1 10 -2 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) 2.0 1.5 1.0 0.5 0 f=1MHz Ta=25 C t rr - I F 100 50 30 Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.2 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2008. 9. 8 Revision No : 4 50Ω 2/2