KDS121E_07

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package Low Forward Voltage Small Total Capacitance : ESM. : VF=0.9V (Typ.). 2 E KDS121E SILICON EPITAXIAL PLANAR DIODE B Fast Reverse Recovery Time : trr=1.6ns(Typ.). A G H D DIM A B C D E G H J : CT=0.9pF (Typ.). MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 1 3 C MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V J 3 1. ANODE 1 V mA mA A mW 2. ANODE 2 3. CATHODE 2 1 ESM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking B3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF nS V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2007. 5. 10 Revision No : 3 1/2 KDS121E IF - VF 10 FORWARD CURRENT I F (mA) 3 IR - VR 10 REVERSE CURRENT I R (µA) 10 10 2 1 Ta=100 C Ta=75 C =2 5 =-2 C 5 C C 10 10 -1 0 Ta = Ta 1 10 10 -1 Ta Ta=50 C -2 10 Ta=25 C -2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE V F (V) -3 0 20 40 60 80 REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) f=1MHz Ta=25 C t rr - I F 100 50 30 Ta=25 C Fig. 1 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2007. 5. 10 Revision No : 3 50Ω 2/2