KDS123V

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2 KDS123V SILICON EPITAXIAL PLANAR DIODE E B A G H 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg 0.7 RATING 80 80 300* 100* 2* 100 150 -55 150 UNIT V V mA mA A mW C K P P J D Ultra- Small Surface Mount Package DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ 0.3 + 0.05 D _ 1.2 + 0.05 E _ G 0.8 + 0.05 H 0.40 _ J 0.12 + 0.05 _ K 0.2 + 0.05 P 5 3 1. CATHODE 2 2. ANODE 1 3. ANODE 2 / CATHODE 1 D1 D2 2 1 VSM * Unit Rating. Total Rating=Unit Rating Marking US Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance ) TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. TYP. MAX. 1.2 0.1 3.5 UNIT V A pF SYMBOL VF IR CT 2007. 10. 31 Revision No : 0 1/3 KDS123V IF - VF FORWARD CURRENT IF (mA) FORWARD CURRENT IF (mA) 100 Ta=25 C IF - VF 100 Ta=25 C 10 D1, D3 10 D2, D4 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) FORWARD VOLTAGE VF (V) IR - VR 1 1 Ta=25 C IR - VR REVERSE CURRENT IR (nA) Ta=25 C REVERSE CURRENT IR (nA) 0.1 0.1 0.01 D1, D3 0.01 D2, D4 0.001 0 10 20 30 40 50 60 70 80 0.001 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) CT - VR TOTAL CAPACITANCE CT (pF) f=1MHz Ta=25 C CT - VR TOTAL CAPACITANCE CT (pF) 10 f=1MHz Ta=25 C 10 1 D1, D3 1 D2, D4 0.1 0 5 10 15 20 25 30 35 40 45 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2007. 10. 31 Revision No : 0 2/3 KDS123V P - Ta POWER DISSIPATION P (mW) 120 100 80 60 40 20 0 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2007. 10. 31 Revision No : 0 3/3