KDS127E

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. KDS127E SILICON EPITAXIAL PLANAR DIODE B FEATURES Low Forward Voltage Fast Reverse Recovery Time Ultra- Small Surface Mount Package A1 B1 Small Total Capacitance A C 1 6 2 C 5 3 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 80 80 300 * 100 * 2* 200** 150 -55 150 UNIT V V mA mA A mW 1. D1 ANODE 2. D2 CATHODE 3. D3/D4 ANODE/CATHODE 4. D3 ANODE 5. D4 CATHODE 6. D1/D2 ANODE/CATHODE H J TES6 * Where D1, D2, D3, D4 are used independently or simultaneously, the Maximum Ratings per diode are 50% of those of the single diode. ** Total Rating EQUIVALENT CIRCUIT (TOP VIEW) Marking 6 5 Type Name 4 6 5 4 D4 D1 1 2 D3 D2 3 US 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF IR CT TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. TYP. MAX. 1.2 0.1 3.5 UNIT V A pF 2007. 10. 31 Revision No : 0 D 1/3 KDS127E IF - VF FORWARD CURRENT IF (mA) FORWARD CURRENT IF (mA) 100 Ta=25 C IF - VF 100 Ta=25 C 10 D1, D3 10 D2, D4 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) FORWARD VOLTAGE VF (V) IR - VR 1 1 Ta=25 C IR - VR REVERSE CURRENT IR (nA) Ta=25 C REVERSE CURRENT IR (nA) 0.1 0.1 0.01 D1, D3 0.01 D2, D4 0.001 0 10 20 30 40 50 60 70 80 0.001 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) CT - VR TOTAL CAPACITANCE CT (pF) f=1MHz Ta=25 C CT - VR TOTAL CAPACITANCE CT (pF) 10 f=1MHz Ta=25 C 10 1 D1, D3 1 D2, D4 0.1 0 5 10 15 20 25 30 35 40 45 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2007. 10. 31 Revision No : 0 2/3 KDS127E P - Ta POWER DISSIPATION P (mW) 240 200 160 120 80 40 0 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2007. 10. 31 Revision No : 0 3/3