SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package
KDS127U
SILICON EPITAXIAL PLANAR DIODE
B B1 1 A1 C 2 C 3 A 6 5 4 D
DIM MILLIMETERS _ A 2.00 + 0.20 _ A1 1.3 + 0.1 _ B 2.1 + 0.1 _ B1 1.25 + 0.1
C 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 D G H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 80 80 300 * 100 * 2* 200** 150 -55~150 UNIT V V mA mA A mW ℃ ℃
H T G
T
1. D1 ANODE 2. D2 CATHODE 3. D3/D4 ANODE/CATHODE 4. D3 ANODE 5. D4 CATHODE 6. D1/D2 ANODE/CATHODE
US6
* Where D1, D2, D3, D4 are used independently or simultaneously, the Maximum Ratings per diode are 50% of those of the single diode. ** Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
6 5 4
Lot No.
6
5
4
D4 D1
1 2
D3 D2
3
Type Name
S7
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF IR CT TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. TYP. MAX. 1.2 0.1 3.5 UNIT V μ A pF
2008. 9. 11
Revision No : 1
1/3
KDS127U
IF - VF
FORWARD CURRENT IF (mA)
Ta=25 C
IF - VF
FORWARD CURRENT IF (mA)
100
Ta=25 C
100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2
D1, D3
10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2
D2, D4
FORWARD VOLTAGE VF (V)
FORWARD VOLTAGE VF (V)
IR - VR
1
IR - VR
1
REVERSE CURRENT IR (nA)
0.1
REVERSE CURRENT IR (nA)
Ta=25 C
Ta=25 C
0.1
0.01
D1, D3
0.01
D2, D4
0.001 0 10 20 30 40 50 60 70 80
0.001 0 10 20 30 40 50 60 70 80
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE VR (V)
CT - VR
TOTAL CAPACITANCE CT (pF)
f=1MHz Ta=25 C
CT - VR
TOTAL CAPACITANCE CT (pF)
10
f=1MHz Ta=25 C
10
1
D1, D3
1
D2, D4
0.1 0 5 10 15 20 25 30 35 40 45
0.1 0 5 10 15 20 25 30 35 40 45
REVERSE VOLTAGE VR (V)
REVERSE VOLTAGE VR (V)
2008. 9. 11
Revision No : 1
2/3
KDS127U
P - Ta
POWER DISSIPATION P (mW)
240 200 160 120 80 40 0
-40
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2008. 9. 11
Revision No : 1
3/3
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