KDS142E

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.). 2 E KDS142E SILICON EPITAXIAL PLANAR DIODE B D 3 DIM A B C D E G H J MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G 1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 2 1 3 C MAXIMUM RATING (Ta=25 ) H J ESM Note : * Unit Rating. Total Rating=Unit Rating x 0.7 Marking DS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current ) TEST CONDITION IF=10mA VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF IR SYMBOL 2003. 1. 27 Revision No : 0 1/2 KDS142E IF 100 FORWARD CURRENT I F (mA) D1 - VF 100 D1+D2 IF FORWARD CURRENT I F (mA) D2 - VF 10 10 Ta=1 25 C Ta=7 5C Ta=12 5C Ta=75 C Ta=25 Ta=-25 C C 0.1 Ta= 125 C Ta= 75 C Ta= 25 C Ta=-2 5C 1 1 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE VF (V) 0.01 0 0.4 0.8 1.2 1.6 FORWARD VOLTAGE VF (V) I R - VR 100 Ta=125 C D1 D2 D1 D2 D1 D2 C T - VR 10 TOTAL CAPACITANCE CT (pF) 5 3 (D1) (D1+D2) (D2) f=1MHz REVERSE CURRENT IR (nA) 10 Ta=125 C Ta=100 C Ta=100 C Ta=75 C Ta=75 C 1 0.1 1 0.5 0.01 0 5 10 15 REVERSE VOLTAGE VR (V) 0.5 1 3 Ta=25 C Ta=-2 5C 10 30 REVERSE VOLTAGE VR (V) 2003. 1. 27 Revision No : 0 2/2