KDS160-RTK/P

SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. K L H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2 J D C I DIM MILLIMETERS _ 0.2 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + _ 0.06 0.30 + _ 0.05 1.70 + A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC B C SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA D E Maximum (Peak) Reverse Voltage 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD * 200 mW Tj 150 ℃ Tstg -55～150 ℃ Junction Temperature Storage Temperature Range J _ 0.10 0.27 + _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + K L M 0.4 2 +4/-2 4~6 F G H I M 1. ANODE IO Average Forward Current M 2. CATHODE USC * : Mounted on a glass epoxy circuit board of 20×20mm, pad dimension of 4×4mm. Marking Lot No. UF Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2014. 3. 31 Revision No : 8 1/3 KDS160 I F - VF 10 REVERSE CURRENT I R (µA) 10 10 0 10 C Ta =2 Ta 5 C =-2 5 C 2 10 Ta = FORWARD CURRENT I F (mA) I R - VR 3 1 10 10 -1 Ta=75 C 10 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 Ta=100 C 1 -1 Ta=50 C -2 Ta=25 C -3 0 1.2 20 40 t rr C T - VR REVERSE RECOVERY TIME t rr (ns) TOTAL CAPACITANCE CT (pF) 2.0 f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0 0.3 1 3 10 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 0.1 60 30 100 - IF 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (R) PEAK SURGE FORWARD CURRENT I FSM (A) IFSM - t 10 IFSM t 1 1 10 100 T IME t (ms) 2014. 3. 31 Revision No : 8 2/3 KDS160 Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2010. 8. 25 Revision No : 7 3/3