KDS165T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. Fast Reverse Recovery Time. Small Total Capacitance. 1 KDS165T SILICON EPITAXIAL PLANAR DIODE E B 4 DIM MILLIMETERS _ A 2.9 + 0.2 B C D 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 _ 0.16 + 0.05 0.00-0.10 0.25+0.3/-0.15 _ 0.60 + 0.1 _ 0.55 + 0.1 A F 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM * IO * IFSM * PD ** Tj Tstg RATING 85 80 300 100 2 900 150 -55 150 0.8 ) UNIT V V mA mA A mW K C H I I E F G H I J K G D 4 D1 1 3 D2 2 TSQ * : Unit Rating. (Total Rating=Unit Rating 1.5) ** : Total rating, Package mounted on a ceramic board (600 Marking 4 3 Lot No. Type Name G3 1 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF nS V UNIT SYMBOL 2005. 6. 21 Revision No : 0 1/2 KDS165T I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C Ta =2 Ta 5 C =-2 5 C 0 3 I R - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr 100 50 30 - IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2005. 6. 21 Revision No : 0 50Ω 2/2