KDS184-RTK/P

SEMICONDUCTOR KDS184 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E B L L ・Small Package : SOT-23. ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). D ・Low Forward Voltag : VF=0.9V(Typ.). 3 G A 2 H ・Small Total Capacitance : CT=0.9pF(Typ.). 1 Q SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Maximum (Peak) Reverse Voltage J K CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 1. ANODE 1 2. ANODE 2 3. CATHODE Surge Current (10ms) Storage Temperature Range 2 1 SOT-23 Note : *Unit Rating. Total Rating=Unit Rating x 1.5 Marking Lot No. B3 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 1998. 6. 15 Revision No : 1 1/2 KDS184 1998. 6. 15 Revision No :1 2/2