KDS193_12

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. ・Low Forward Voltag : VF=0.9V(Typ.). ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). A G L KDS193 SILICON EPITAXIAL PLANAR DIODE E B L DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 ・Small Total Capacitance : CT=0.9pF(Typ.). 3 D B C D E G H J K H 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 100 2 150 150 -55～150 UNIT V V mA mA A mW ℃ ℃ C N P P L M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 K SOT-23 Marking J Lot No. Type Name F3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA TEST CONDITION MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 μ A pF ns V UNIT 2012. 3. 29 Revision No : 2 1/2 KDS193 IF - VF 10 FORWARD CURRENT I F (mA) 10 10 0 C Ta =2 Ta 5 C =-2 5 C 3 IR - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr - I F 100 50 30 Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (V) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2012. 3. 29 Revision No : 2 50Ω 2/2