KDS221V

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage : VF=1.0V (Max.). Small Package : VSM. 2 KDS221V SILICON EPITAXIAL PLANAR DIODE E B 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW C P P DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ 0.3 + 0.05 D _ 1.2 + 0.05 E _ G 0.8 + 0.05 H 0.40 _ J 0.12 + 0.05 _ K 0.2 + 0.05 P 5 A G H K J D 3 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 2 1 VSM Note : * Unit Rating. Total Rating=Unit Rating x 0.7 Marking DS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current ) TEST CONDITION IF=10mA VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF IR SYMBOL 2003. 10. 28 Revision No : 0 1/2 KDS221V IF 100 FORWARD CURRENT I F (mA) D1 - VF 100 D1+D2 IF FORWARD CURRENT I F (mA) D2 - VF 10 10 25 C Ta=7 5C Ta=12 5C Ta=75 C Ta=25 Ta=-25 C C Ta= 125 C Ta= 75 C Ta= 25 C Ta=-2 5C 1 1 0.1 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE VF (V) 0.01 0 0.4 0.8 1.2 1.6 FORWARD VOLTAGE VF (V) I R - VR 100 Ta=125 C D1 D2 D1 D2 D1 D2 C T - VR 10 TOTAL CAPACITANCE CT (pF) 5 3 (D1) (D1+D2) (D2) f=1MHz REVERSE CURRENT IR (nA) 10 Ta=125 C Ta=100 C Ta=100 C Ta=75 C Ta=75 C 1 0.1 1 0.5 0.5 1 3 10 30 REVERSE VOLTAGE VR (V) 0.01 0 5 10 15 REVERSE VOLTAGE VR (V) 2003. 10. 28 Revision No : 0 Ta=25 C Ta=-2 5C Ta=1 2/2