SEMICONDUCTOR
KDS226
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
E
B
L
FEATURES
L
・Small Package : SOT-23.
D
・Low Forward Voltag : VF=0.9V(Typ.).
2
H
A
3
G
・Fast Reverse Recovery Time : trr=1.6ns(Typ.).
・Small Total Capacitance : CT=0.9pF(Typ.).
1
Q
Maximum (Peak) Reverse Voltage
SYMBOL
RATING
UNIT
VRM
85
V
Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300 *
mA
Average Forward Current
IO
100 *
mA
IFSM
2*
A
Power Dissipation
PD
150
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
J
K
CHARACTERISTIC
C
MAXIMUM RATING (Ta=25℃)
P
N
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93 +_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
M
3
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
2
Surge Current (10ms)
Storage Temperature Range
1
SOT-23
Note : *Unit Rating. Total Rating=Unit Rating x 0.7
Marking
Lot No.
C3
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.60
-
VF(2)
IF=10mA
-
0.72
-
VF(3)
IF=100mA
-
0.90
1.20
UNIT
V
Reverse Current
IR
VR=80V
-
-
0.5
μA
Total Capacitance
CT
VR=0, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
trr
IF=10mA
-
1.6
4.0
nS
2011. 8. 10
Revision No : 2
1/2
KDS226
2011. 8. 10
Revision No :2
2/2
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