KDS226-RTK/P

SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B L FEATURES L ・Small Package : SOT-23. D ・Low Forward Voltag : VF=0.9V(Typ.). 2 H A 3 G ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=0.9pF(Typ.). 1 Q Maximum (Peak) Reverse Voltage SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ J K CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 2 Surge Current (10ms) Storage Temperature Range 1 SOT-23 Note : *Unit Rating. Total Rating=Unit Rating x 0.7 Marking Lot No. C3 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2011. 8. 10 Revision No : 2 1/2 KDS226 2011. 8. 10 Revision No :2 2/2