KDS4148U_09

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : USC. ・Low Forward Voltage. ・Fast Reverse Recovery Time. ・Small Total capacitance. CATHODE MARK B 1 KDS4148U SILICON EPITAXIAL PLANAR DIODE G K A H E 2 D J C I DIM MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD* Tj Tstg RATING 100 75 450 150 2 200 150 -55～150 UNIT V V mA mA A mW ℃ ℃ M M A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC * : Mounted on a glass epoxy circuit board of 20×20㎜, Pad dimension of 4×4㎜. Marking Lot No. UH Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr IF=1mA IF=10mA IF=100mA VR=75V VR=0V, f=1MHz IF=10mA TEST CONDITION MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 2.0 4.0 μ A pF nS V UNIT 2009. 3. 25 Revision No : 3 F L 1/2 KDS4148U I F - VF 10 FORWARD CURRENT I F (mA) 10 10 1 10 10 -1 3 I R - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 C Ta =2 Ta 5 C =-2 5 C Ta = 10 10 -1 0 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr 100 50 30 - IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 3. 25 Revision No : 3 50Ω 2/2