KDV142E

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.). CATHODE MARK C 1 KDV142E SILICON EPITAXIAL PIN TYPE DIODE E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name EF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.35 1.3 V UNIT A V pF 2003. 10. 24 Revision No : 0 1/2 KDV142E IF 10 FORWARD CURRENT I F (A) 10 10 10 10 10 -2 - VF 10 REVERSE CURRENT IR (A) -11 I R - VR -4 -6 10 -12 -8 -10 -12 0 0.2 0.4 0.6 0.8 1.0 10 -13 0 20 40 60 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR 1.0 TOTAL CAPACITANCE C T (pF) f=1MHz rs 10 SERIES RESISTANCE r s (Ω) 2 - IF f=100MHz 10 1 10 0 0.1 0.1 10 1.0 REVERSE VOLTAGE VR (V) 10 -1 10 -4 10 -3 10 -2 FORWARD CURRENT I F (A) r P - VF SERIES RESISTANCE PARALLEL rp (Ω) 10 10 10 10 10 10 5 f=100MHz 4 3 2 1 0 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2003. 10. 24 Revision No : 0 2/2