KDV142EL

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package . J 2 B I 1 KDV142EL SILICON EPITAXIAL PIN TYPE DIODE 2 E A F ] (Max.) H 1 D G G MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA C DIM A B C D E F G H I MILLIMETERS _ 0.6 + 0.05 _ 0.3 + 0.05 _ 0.28 + 0.05 _ 0.25 + 0.05 _ 0.18 + 0.05 Typ 0.36 _ 0.025 + 0.02 _ 0.2 + 0.05 Max 0.3 Typ 0.1 1. ANODE 2. CATHCDE J ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. MIN. TYP. MAX. 0.1 1.0 0.35 1.3 UNIT A V pF ESD-Capability * 100 - - 2007. 8. 10 Revision No : 1 1/2 KDV142EL IF FORWARD CURRENT IF (A) 10 -2 - VF 10 -11 I R - VR REVERSE CURRENT IR (A) 10-4 10-6 10 -12 10 -8 10-10 10-12 10 0 0.2 0.4 0.6 0.8 1.0 -13 0 20 40 60 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT TOTAL CAPACITANCE CT (pF) 1.0 - VR SERIES RESISTANCE rS (Ω) f=1MHz rs 10 2 - IF f=100MHz 10 1 10 0 0.1 0.1 10 1.0 10 -1 10 -4 10 -3 10 -2 FORWARD VOLTAGE VR (V) FORWARD CURRENT IF (A) SERIES RESISTANCE PARALLEL rp (Ω) rP 10 10 10 10 10 10 5 - VF f=100MHz 4 3 2 1 0 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2007. 8. 10 Revision No : 1 2/2