KDV142V

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package : ESC ] (Max.) 2 KDV142V SILICON EPITAXIAL PIN TYPE DIODE CATHODE MARK 1 D C B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT F E DIM A B C D E F MILLIMETERS _ 1.4 + 0.05 _ 1.0 + 0.05 _ 0.6 + 0.05 _ 0.28 + 0.03 _ 0.5 + 0.05 _ 0.12 + 0.03 V mA 1. ANODE 2. CATHODE VSC Marking CATHODE MARK 2 1 PA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. MIN. TYP. MAX. 0.1 1.0 0.35 1.3 UNIT A V pF ESD-Capability * 100 - - 2006. 9. 8 Revision No : 0 1/2 KDV142V IF - VF 10-2 10-11 IR - VR FORWARD CURRENT IF (A) 10-4 10-6 10-8 10-10 10-12 0 0.2 0.4 0.6 0.8 1.0 REVERSE CURRENT IR (A) 10-12 10-13 0 20 40 60 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR TOTAL CAPACITANCE CT (pF) 1.0 f=1MHz rs - IF 102 SERIES RESISTANCE rS (Ω) f=100MHz 101 100 0.1 0.1 1.0 10 10-1 -4 10 10-3 10-2 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE VF (V) rP - VF SERIES RESISTANCE PARALLEL rP (Ω) 105 f=100MHz 4 10 103 102 101 100 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2006. 9. 8 Revision No : 0 2/2