SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package : ESC ] (Max.)
2
KDV142V
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT
F E
DIM A B C D E F
MILLIMETERS _ 1.4 + 0.05 _ 1.0 + 0.05 _ 0.6 + 0.05 _ 0.28 + 0.03 _ 0.5 + 0.05 _ 0.12 + 0.03
V mA
1. ANODE 2. CATHODE
VSC
Marking
CATHODE MARK
2
1
PA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. MIN. TYP. MAX. 0.1 1.0 0.35 1.3 UNIT A V pF
ESD-Capability *
100
-
-
2006. 9. 8
Revision No : 0
1/2
KDV142V
IF - VF
10-2 10-11
IR - VR
FORWARD CURRENT IF (A)
10-4 10-6 10-8 10-10 10-12 0 0.2 0.4 0.6 0.8 1.0
REVERSE CURRENT IR (A)
10-12
10-13 0 20 40 60
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
CT - VR
TOTAL CAPACITANCE CT (pF)
1.0
f=1MHz
rs - IF
102
SERIES RESISTANCE rS (Ω)
f=100MHz
101
100
0.1 0.1 1.0 10
10-1 -4 10
10-3
10-2
REVERSE VOLTAGE VR (V)
FORWARD VOLTAGE VF (V)
rP - VF
SERIES RESISTANCE PARALLEL rP (Ω)
105
f=100MHz
4
10
103 102 101 100
0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE VF (V)
2006. 9. 8
Revision No : 0
2/2
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