KDV143EL

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Low Operation Current. Small Package . 1 KDV143EL SILICON EPITAXIAL PIN TYPE DIODE 2 E A F J 2 B I H 1 D G G MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA C DIM A B C D E F G H I MILLIMETERS _ 0.6 + 0.05 _ 0.3 + 0.05 _ 0.28 + 0.05 _ 0.25 + 0.05 _ 0.18 + 0.05 Typ 0.36 _ 0.025 + 0.02 _ 0.2 + 0.05 Max 0.3 Typ 0.1 1. ANODE 2. CATHCDE J ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ) TEST CONDITION VR =30V IF = 2mA VR =1V, f =1MHz IF =2mA, f =100MHz C =200pF, R =0 , Both forward and reverse direction 1 pulse MIN. TYP. MAX. 0.1 0.9 0.43 1.8 UNIT A V pF SYMBOL IR VF CT rs - ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. 100 - - 2007. 8. 10 Revision No : 2 1/2 KDV143EL IF - VF 10-2 10-8 IR - VR FORWARD CURRENT IF (A) REVERSE CURRENT IR (A) 10-4 10-6 10-8 10-10 10-12 0 0.2 0.4 0.6 0.8 1.0 Ta=75 C Ta=50 C Ta=25 C 10-9 10-10 10-11 10-12 10-13 10-14 0 10 20 30 40 50 Ta=75 C Ta=50 C Ta=25 C FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) rs - IF f=100MHz CT - VR TOTAL CAPACITANCE CT (pF) 1.0 f=1MHz 100.0 SERIES RESISTANCE rs (Ω) 10.0 1.0 0.1 0.1 1.0 10.0 0.1 1.0 10.0 FORWARD CURRENT IF (mA) REVERSE VOLTAGE VR (V) 2007. 8. 10 Revision No : 2 2/2