KDV144EL

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.30[pF] (Max.) Low Series resistance : rS=1.3[ Small Package . J 2 B I 1 KDV144EL SILICON EPITAXIAL PIN TYPE DIODE 2 E A F H ] (Max.) 1 G D DIM A B C D E F G G MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA C H I MILLIMETERS _ 0.6 + 0.05 _ 0.3 + 0.05 _ 0.28 + 0.05 _ 0.25 + 0.05 _ 0.18 + 0.05 Typ 0.36 _ 0.025 + 0.02 _ 0.2 + 0.05 Max 0.3 Typ 0.1 1. ANODE 2. CATHCDE J ELP-2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 2008. 12. 16 Revision No : 2 1/2 KDV144EL IF - VF FORWARD CURRENT IF (A) 100 10 -1 IR - V R 10-09 Ta=25 C 10-2 10-3 10-4 10-5 10-6 REVERSE CURRENT IR (A) Ta=25 C 10-10 0 0.2 0.4 0.6 0.8 1.0 1.2 10-11 0 2 4 6 8 10 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR TOTAL CAPACITANCE CT (pF) 1.0 rs 100 - IF f=100MHz Ta=25 C SERIES RESISTANCE rS (Ω) 2 4 6 8 10 f=1MHz Ta=25 C 10 1 0.1 0 0 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (mA) 2008. 12. 16 Revision No : 2 2/2