KDV1480

SEMICONDUCTOR TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES Applicable to FM wide band due to high capacitance ratio. Excellent C-V Characteristics. Variations of Capacitance Values is Little. A KDV1480 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE L E B L G Small Package. 2 3 1 P P C Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg 16 150 -55 150 V 1. ANODE 1 2. ANODE 2 3. CATHODE 2 K CHARACTERISTIC SYMBOL RATING UNIT M 3 J MAXIMUM RATING (Ta=25 ) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 N H D 1 SOT-23 Marking Lot No. Type Name CA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current SYMBOL VR IR C3.0V Capacitance (Note1) C4.5V C6.0V C8.0V Figure of merit Capacitance Ratio Note 1) Capacitance value of one diode. Q C3.0V/C8.0V IR=10 A VR=10V VR=3.0V, f=1MHz VR=4.5V, f=1MHz VR=6.0V, f=1MHz VR=8.0V, f=1MHz VR=3.0V, f=100MHz TEST CONDITION MIN. 16 36.92 27.45 19.91 12.77 60 2.50 TYP. MAX. 50 43.03 32.80 25.61 16.84 3.00 pF UNIT V nA 2004. 2. 12 Revision No : 1 1/2 KDV1480 C, Q - VR 500 300 CAPACITANCE C (pF) 0 (f=1 0M Hz) C - Ta 500 300 CAPACITANCE RATIO FIGURE OF MERIT Q 1.03 1.02 1.01 1.00 0.99 0.98 0.97 -30 -20 -10 0 10 20 30 40 50 60 70 80 VR 6V 3V VR =3 V 100 50 30 Q 100 50 C (f 6V 4V 8V =8V 4V 30 =1M Hz) 10 0 1 2 3 4 5 6 7 8 9 10 11 10 REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta ( C) 2004. 2. 12 Revision No : 1 2/2