SEMICONDUCTOR
TECHNICAL DATA
TV TUNING. FEATURES
Low Series Resistance : rS=0.57 Useful for Small Size Tuner. (Max.)
KDV214E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
High Capacitance Ratio : C2V/C25V=6.3(Typ.) Excellent C-V Characteristics, and Small Tracking Error.
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 32 125 -55 125 UNIT V
1. ANODE 2. CATHODE
B
A
DIM A B C D E F
MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) IR
)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz MIN. 14.15 2.06 6.3 VR=5V, f=470MHz TYP. MAX. 10 15.75 2.35 0.57 UNIT nA pF pF -
SYMBOL
C2V C25V C2V/C25V rS
Note : Available in matched group for capacitance to 2.0%. 0.02
Marking
Type Name
UO
2003. 12. 2
Revision No : 3
1/2
KDV214E
I R - VR
10 REVERSE CURRENT I R (A)
-10
C T - VR
20 TOTAL CAPACITANCE CT (pF)
f=1MHz
10
-11
15
10
10
-12
5
10
-13
0
10
20
30
40
0 1 10 REVERSE VOLTAGE VR (V) 50
REVERSE VOLTAGE VR (V)
r s - VR
0.6 SERIES RESISTANCE rs (Ω)
f=470MHz
∆(LOG CT ) / ∆(LOG VR ) - VR
0 ∆(LOG CT) / ∆(LOG VR)
0.5 0.4 0.3 0.2 0.1 0 1 10 REVERSE VOLTAGE VR (V) 50
-0.5
-1.0
-1.5 1 10 REVERSE VOLTAGE VR (V) 50
2003. 12. 2
Revision No : 3
2/2
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