KDV215

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 2 D KDV215 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G K A H E J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10 125 -55 125 ) UNIT V V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC Marking Type Name VA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current SYMBOL IR IR C2V C25V C2V/C25V rS VR=5V, f=470MHz VR=30V VR=30V, (Ta=60 ) VR=2V, f=1MHz VR=25V, f=1MHz ) TEST CONDITION MIN. 14.16 2.11 5.90 TYP. 6.50 0.4 MAX. 10 nA 100 16.25 pF 2.43 7.15 0.55 UNIT Capacitance Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) 0.025 C(Min.) (VR=2~25V) 2005. 12. 7 Revision No : 0 F L 1/2 KDV215 CT - VR 100 rs - VR SERIES RESISTANCE rs (Ω) f=1MHz Ta=25 C 0.8 0.6 CAPACITANCE CT (pF) 50 30 f=470MHz Ta=25 C 10 5 3 0.4 0.2 1 0 4 8 12 16 20 24 28 0 1 3 5 10 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) C (%) C - Ta 3 f=1MHz CAPACITANCE CHANGE RATIO 2 1 0 -1 -2 -40 -20 0 20 40 VR =2V 14 20 25 60 80 AMBIENT TEMPERATURE Ta ( C) NOTE : C(%) = C(Ta) - C(25) C(25) 100 2005. 12. 7 Revision No : 0 2/2